Effects of the substratc temperature and $O_2$/Ar ration on $RuO_2$ film properties were studied. Prpoerties of the films deposited at $300^{circ}C$ were superior to those deposited at room temperature. Metallic Ru phase was formed at low oxygen partial pressure and this phase resulted the poor adhesion after the post annelaing process in oxidizing ambinet due to the molar volume expansion. Microsturcutral analysis reveals that the size of the $RuO_2$ crystallites gets smaller and the surface becomes smoother as the $O_2$ partial pressure on film thickness decreases. Regardless of the $O_2$ partial pressure, resistiveity of the film ranged in 50~70${mu}{Omega}-cm$. As the film thickness decreases, we could find a thickness where the resistivity rises abruptly. Such an onset thickness turned out to be dependent on the $O_2$ partial pressire.