In the following pages, we will review the current status and the prospects for silicon semiconductor devices and process technologies. At present, the 16M DRAM is under mass production, and 64M DRAM is being prepared mass production. In addition, a fully operational 256M DRAM has been developed at research level. Furthemore, new silicon devices with a minimum feature size in the $0.06~0.1{mu}m$ are under development. This minimum feature size is less than half the physical limit of $~0.2{mu}m$ predicted by B.Heoneinsen and C. Mead 20 years ago. This limitation and various other obstacles to the development of semiconductor engineering are the topics of this paper. These obstacles include ; devices issues of sub-quarter micron size, device scaling problems near $0.1{mu}m$, technical development related to $0.1{mu}m$ lithography and etching, high and low dielectric materials for the higher density, higher speed devices, and dielectric planarization. And in summary, we present a table which illustrate the current research idrection and future prospects for device fabrication limits.