MOCVD of Cu films were carried out on gold-TiN(1000$AA$)/Ti/Si wafers from hexafluoroacetylacetonate-Cu(l) vinyltrimethylsilane, Cu(l)(hafac)(vtms), in a small cold-wall type reactor. Effects of the substrate and bubbler temperatures on the film growth rate were studied, and a film with $ ho$=1.8$pm$0.1$mu$$Omega$.cm could be deposited 150nm/min at Ts=200 and Tb=$30^{circ}C$, respectively. The initial stage of the film formation was also investigated by in-situ laser reflectivity monitoring combined with SEM observations, based on which variations in the film properties depending on the growth conditions were discussed in terms of the nucleation rate and grain size.