- ECR-PECVD법을 사용한 ULSI DRAM 용 PZT 박막 제조
- ㆍ 저자명
- 김재환,신중식,김성태,노광수,위당문,이원종
- ㆍ 간행물명
- 韓國眞空學會誌
- ㆍ 권/호정보
- 1995년|4권 |pp.145-150 (6 pages)
- ㆍ 발행정보
- 한국진공학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
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PZT thin films were fabricated on Pt/Ti/SiO2/Si substrates at $500^{circ}C$ by ECR-PECVD for the application to the charge storage capacitor of ULSI DRAMs. Perovskite single phase PZT films were obtained by controling the film compositional ratio Pb/(Zr+Ti) close to 1. The anion concentrations in the PZT films were successfully controlled by adjusting the flow rates of each MO sources. Capacitance of a typical 94 nm thick PZT film prepared at $500^{circ}C$ in this work was about 5.3 uF/$ extrm{cm}^2$, which corresponds to the equivalent SiO2 thickness of 0.65nm.