We have proposed a novel self-aligned offset gated polysilicon TFTs device without an offset mask in order to reduce a leakage current and suppress a kink effect. The photolithographic process steps of the new TFTs device are identical to those of conventional non-offset structure TFTs and an additional mask to fabricate an offset structure is not required in our device due to the self-aligned process. The new device has demonstrated a lower leakage current and a better ON/OFF current ratio compared with the conventional non-offset device. The new TFT device also exhibits a considerable reduction of the kink effect because a very thin film TFT devices may be easily fabricated due to the elimination of contact over-etch problem.