고체 시료를 대상으로 하여 silicon wafer에는 $90^{circ}$ wedge형 진동자를 사용하고 압전재료인 $LiTaO_3$에는 interdigital transducer(IDT)를 사용하였으며, knife edge를 이용한 광학적 검지(optical probing)법을 써서 표면탄성파의 발생 및 측정하는 기법으로써 재료에서의 표면탄성파의 감쇠를 검출하는 방법을 연구하였다. IDT1 및 IDT2로는 20.8 MHz와 14.5 MHz를, $90^{circ}$ wedge형 진동자로부터는 20.0 MHz의 표면탄성파를 발생시켰으며 표면탄성파로 생기는 표면의 굴곡을 검출하는데 He-Ne laser beam을 이용하였다. Optical chopper로 변조시킨 laser beam을 같은 주파수로 변조시킨 표면탄성파에 입사시켜 산란되는 광을 같은 주파수로 동조된 lock-in amplifier로 검출하였다. 이와 같이 함으로써 검출할 표면탄성파와 검출에 사용된 laser beam 및 측정기기인 위상감지기(Phase Sensitive Detector : PSD)를 같은 주파수로 변조하여 동기시킬 수 있었으며 측정계를 단순화하였다. IDT1, IDT2에서 발생된 표면탄성과의 감쇠계수는 각각 $0.62{sim}0.75dB/mm,;0.60{sim}0.72dB/mm$였으며 wedge형 진동자에서는 $0.83{sim}1.28dB/mm$인 값을 얻었다.
We have studied methods of detecting attenuation of solid materials such as silicon wafer and piezoelectric $LiTaO_3$ by means of optical probing techniques. We have performed measurements of surface acoustic waves(SAW) generated from 90 degree wedge type transducer and also from inter-digital transducers(IDT). SAW of 20.0 MHz was generated on a silicon wafer from the 90 degree wedge type transducer and those of 20.8 and 14.5 MHz are generated on a $LiTaO_3$ from the IDT. Then any surface-corrugation resulted from the above SAW was investigated by He-Ne laser beams. We projected laser beams, which were modulated by an optical chopper, on the SAW of the same frequency and then measured the scattered beam by the lock-in amplifier. We modulated and synchronized both SAW and the incident laser beam as well as the phase sensitive detector(PSD) to the same frequency in order to simplify our measurement system. We obtained the attenuation coefficients of SAW to be $0.62{sim}0.75dB/mm$(from IDT1, 20.8 MHz), and $0.60{sim}0.72dB/mm$(from IDT2, 14.5 MHz), $0.83{sim}1.28dB/mm$(from the wedge type), respectively.
