In this paper, we designed a new type of high frequency on-chip voltage controlled oscillator (VCO) using GaAs MESFET, and their performances were comapred with those of the conventional VCO. Each VCO was designed with three-to-five ring oscillator and inverter, buffer and NOR gate were implemented by GaAs source coupled FET logic, which has better speed and noise performance compared to other GaAs MESFET logic. SPICE simulation showed that the gain of conventional and our new VCO was 1.24[GHz/V], 0.54[GHz/V], respectively. The frquency tuning range were 2.31 to 3.55 [GHz] for conventional VCO and 2.47 to 3.01[GHz] for our new design. This shows that the factor of two gain reductin was achieved without too much sacrifice in the oscillation frequency. For our new VCO, the average temperature index was -2[MHz/.deg. C] in the range of -20~85[.deg. C] the power supply noise index was 5[MHz/%] for 5.3[V].+-.10[%] and total power consumption was 60.58[mW].