SrBi2Ta2O9 (SBT) thin films were prepared by sol-gel coating. Crystallization microstructure and electrical properties were investigated as a function of composition and annealing temperature. Above $700^{circ}C$ the SBT thin films were crystallized without a preferred orientation and had porous and equi-axed poycrystalline micros-tructure. Although crystallization and microstructure of the SBT(1.0/2.0/2.0) and SBT (0.8/2.4/2.0) films were very similar their electrical properties were quite different. Ferroelectric properties were measured only in SBT(0.8/2.4/2.0) thin fhilms annealed at above 77$0^{circ}C$ The SBT(0.8/2.4/2.0) thin films annealed at 80$0^{circ}C$ had the electrical properties which were dielectric constant=242 tan$delta$=0.057 (at 100 kHz) 2Pr=16.9$mu$C/cm2 and Ec=39.8 kV/cm