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Sol-gel법에 의한 $PbZrO_3-PbTiO_3-Pb(Ni_{1/3}Nb_{2/3})O_3$박막의 물리적 특성
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  • Sol-gel법에 의한 $PbZrO_3-PbTiO_3-Pb(Ni_{1/3}Nb_{2/3})O_3$박막의 물리적 특성
  • Physical properties of $PbZrO_3-PbTiO_3-Pb(Ni_{1/3}Nb_{2/3})O_3$ thin films by sol-gel method
저자명
임무열,구경완,김성일,유영각
간행물명
電氣電子材料學會誌= The journal of the Korean Institute of Electrical and Electronic Material Engineers
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1996년|9권 10호|pp.991-1000 (10 pages)
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한국전기전자재료학회
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.