This paper deals with a new multi-level high voltage source inverter with GTO Thyristors. Recently, a multi-level approach seems to be the best suited for implementing high voltage conversion systems because it leads to harmonic reduction and deals with safe high power conversion systems independent of the dynamic switching characteristics of each power semiconductor device. A conventional multi-level inverter has some problems; voltage unbalance between DC-link capacitors and larger blocking voltage across the inner switching devices. To solve these problems, the novel multi-level inverter structure is proposed.