Silicon deposition by Penning discharge was carried out using a mixture of 5% $SiH_4/H_2$ and Ar gas, and the effects of the deposition conditions(gas mixing raito, substrate temperature. discharge power etc.) on the growth rate, crystallinity and morphology of the films deposited were investigated. The magnetic field(800 G) confined the plasma in the region between the two cathodes and enhanced the discharge current by a factor of a few hundreds below 1 mTorr. The magnetic field-enhanced plasma density resulted in a very large deposition rate of about 300 $AA$/min at $SiH_4$ flow rate of 0.7 sccm and the substrate temperature of $800^{circ}C$. Characterization of the films by Raman spectroscopy, X-ray diffraction, and scanning electron microscopy revealed that an epitaxial film with a smooth surface grows above 80$0^{circ}C$, an amorphous film below $400^{circ}C$, and a rough polycrystalline film at intermediate temperatures.