The spectral-domain methos has been applied to an analysis of a open microstrip line on a dielectrically biaxial anisotropic substrate which takes into account both weak and tight anisotropy effect, which are very important in high-requency applications such as optical modulator, MMIC, etc.. Numerical results of propagation characteristics are validated against the data previously published for special dielectrically weak anisotropic cases(sapphire, Epsilam-10) and New data are calculated for dielectrically tight anisotropic case(LiNb $O_{3}$). Data are for these anisotropic substrates presented to illustrate the effect of three different orientations of the principle dielectric axes. It can be derived from the calculated data in this paper that component of dielectric tensor(.epsilon.$_{vv}$ ) in y-axis which is normal to microstrip-laid plane is important factor in propagation characteristics.