- 주파수 합성기용 GaAs prescalar IC 설계 및 제작
- ㆍ 저자명
- 윤경식,이운진
- ㆍ 간행물명
- 한국통신학회논문지
- ㆍ 권/호정보
- 1996년|21권 4호|pp.1059-1067 (9 pages)
- ㆍ 발행정보
- 한국통신학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
A 128/129 dual-modulus prescalar IC is designed for application to frequency synthesizers in high frequency communication systems. The FET logic used in this design is SCFL(Source Coupled FET Logic), employing depletion-mode 1.mu.m gate length GaAs MESFETs with the threshold voltage of -1.5V. This circuit consists of 8 flip-flops, 3 OR gates, 2 NOR gates, a modulus control buffer and I/O buffers, which are integrated with about 440 GaAs MESFETs on dimensions of 1.8mm. For $V_{DD}$ and $V_{SS}$ power supply voltages 5V and -3.3V Commonly used in TTL and ECL circuits are determined, respectively. The simulation results taking into account the threshold voltage variation of .+-.0.2V and the power supply variation of .+-.1V demonstrate that the designed prescalar can operate up to 2GHz. This prescalar is fabricated using the ETRI MMIC foundary process and the measured maximum operating frquency is 621MHz.