Conducting diamond-like carbon films are synthesized using Triode Magnetron Sputtering-Plasma Enhanced Chemical Vapor Deposition(TMS-PECVD), and are examined by four point probe, microhardeness tester, and scanning electron miscroscopy(SEM). As the target bias and Ar/CH$_4$, ratio increase, the electrical resitivity and microhardness of the films are found to decrease, and also, their surface morphologies tend to be rough. While the resistivities of the films are shown to increase in proportion to the increase of the substrate bias, the microhardness of the films is shown to be maximun value(1600kg/$ extrm{mm}^2$) at a certain substrate bias(-70V). We can obtain the conducting diamond-like carbon films with the microhardness of 1600(kg/$ extrm{mm}^2$) and electrical resitivity of 16($Omega$cm) at the process condition such as target bias -400V, substrate bias -70V, and Ar/$CH_4$ ratio 20.