A new CAD-compatible non-quasi-static (NQS) MOS transient model is presented. A new type of weighted residual method, the collcoatin method, is adopted to obtian an approximate ordinary differntial equation from the continuity eqation. Contrasting to the conventional NQS models, the new model can directly include the variatin of the depletion charge and the derived transient current sare expressed with only physically meaningful variables. The new model predicts transient behaviors reasonably well in the calculation including cutoff regions where the depletion charge rapidly changes.