Epitaxial films of cubic silicon carbide (3C-SiC, $eta$-SiC) have been grown on Si(001) and Si(111) substrates by high vacuum chemical vapor deposition using the single precursor 1,3-disilabutane, $H_3SiCH_2SiH_2CH_3$, at temperatures 900~$100^{circ}C$. The advantage of using the single precursor over the covnentional chemical vapor deposition is evident in that the source chemical is safe to handle, carbonization of the substrates is not necessary, accurate stoichiometry of the silicon carbide films is easily achieved, and the deposition temperature is much lowered. The films were characterized by XPS, XRD, SEM, RHEED, RBS, AES, and TED.