To handle the density increase of SRAMs, a new parallel testing methodology based on built-in self test (BIST) is developed, which allows to access multiple cells simultaneously. The main idea is that a march algorithm is dperformed concurently in each baisc marching block hwich makes up whole memory cell array. The new parallel access method is very efficient in speed and reuqires a very thny hardware overhead for BIST circuitry. Results show that the fault coverage of the applied march algorithm can be achieved with a lower complexity order. This new paralle testing algorithm tests an .root.n *.root.n SRAM which consists of .root.k * .root.k basic marching blocks in O(5*.root.k*(.root.k+.root.k)) test sequence.