In2O3-SnO2(ITO) thin films have been prepared by Metallo-organic Deposition(MOD) process. In this study ITO thin films have been prepared by MOD process using hydrophobic solvent and their optical and electrical properties were characterized. Metal organic precursors were dissolved in 2-ethylhexanol hy-drophobic solvent to make the stable solution and the rheology(concentration and viscosity) adusted solu-tion was coated on glass substrates by dipping and spinning. The lower concentration solution was suitable for dip coating and the higher one was suitable for spin coating. Crack free films were made and the film thickness was controlled by repeating the coating and drying process. The films papered have shown the formation of single phase ITO below 400$^{circ}C$ with decomposition of organic components. Transparency of the films(thickness : below 0.42$mu extrm{m}$) showed over 90% of average value in visible range. Increase of tem-perature made higher electric conductivity because of increase of the crystallinity and grain growth. The results of four point probe method on the film heat treated at 600$^{circ}C$ showed resistivity of∼10-2$Omega$$.$cm