The (Sr$_1$-ulcorner.Caulcorner)TiO$_3$(0.05 x 0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[$^{circ}C$] in a reducing atmosphere($N_2$gas). After being fired in a reducing atmosphere, metal oxides(CuO) was painted on the both surface of the specimens to diffuse to the grain boundary. The capacitance changes slowly and almost linearly in the temperature region of -40~+85[$^{circ}C$]. The capacitance characteristics appears a stable value within $pm$10[%]. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 10ulcorner[Hz]. The capacitance is almost unchanged below about 20[V] but it decrease slowly over 20[V]. The voltage-current characteristics of specimens observed in the temperature range of 25~125[$^{circ}C$] as the current increased appears that it is due to space charge condensed to interface between grain and grain boundary.