Highly transparent conductive pure and fluorine-doped tin oxide(FT0, $SnO_2$ : F) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyitin(TMT) with oxygen or oxygen containing ozone. The properties of TO films have been changed with the variation of gases, flow rate, and substrate temperature. The nsing of oxygen containing ozone instead of pure oxygen, reduced substrate temperature by 100-$150^{circ}C$ while maintaining same thickness. The films prepared by using ozone showed the resistivity in the range from $10^~2$ to $10^{~3}Omega$cm, and the mobiiity from 10 to $14 extrm{cm}^2$/Vs. Fluorine-doped tin oxide films had properties such as the resistivity about $10^{-4}Omega$cm, and the mobility from 14 to $19 extrm{cm}^2$/Vs.