다결정 실리콘 박막 트랜지스터를 이용한 회로의 성능 향상을 위하여 새로운 구조의 4-terminal buried channel poly-Si TFT(BCTFT)를 설계하고 제작하였다. BCTFT는 moderate 도핑이 된 buried channel을 이용하므로 기존의 다결정 실리콘 TFT보다 ON-전류와 전계 효과 이동도가 n-형과 p-형 소자 각각 5배와 10배 향상되었다. BCTFT는 moderate 도핑된 buried 채널과 counter 도핑된 body 사이의 junction 공핍에 의하여 캐리어의 이동이 억제 되므로 OFF-전류가 증가하지 않았다.
A buried channel poly-Si TFT (BCTFT) for application of high performance integrated circuits has been proposed and fabricated. BCTFT has unique features, such as the moderately-doped buried channel and counter-doped body region for conductivity modulation, and the fourth terminal entitled back bias for preventing kink effect. The n-type and p-type BCTFT exhibits superior performance to conventional poly-Si TFT in ON-current and field effect mobility due to moderate doping at the buried channel. The OFF-state leakage current is not increased because the carrier drift is suppressed by the p-n junction depletion between the moderately-doped buried channel and the counter-doped body region.
