The device characteristics of the base resistance controlled thyristor with self-align corrugated p-base is demonstrated for the first time with varying the n+ cathode width and the temperature form room temperature to $125^{circ}C$. The experimental results show that the snap-back in the CB-BRT is significantly suppressed irrespective of the various n+ cathode width and the temperature as compared with that of the conventional BRT. The maximum controllable current of the CB-BRT is uniformly higher when compared with that of the conventional BRT over the temperature range from room temperature to $125^{circ}C$.