We have proposed and fabricated the new bottom-gated polycrystalline silicon (poly-Si) thin film transistor (TFT) with a partial amorphous-Si region by employing the selective laser annealing. The channel layer of the proposed TFTs is composed of poly-Si region in the center and a-Si region in the edge. The TEM image shows that the local a-Si region is successfully fabricated by the effective cut out of the incident laser light in the upper a-Si layer. Our experimental results show that the ON/OFF current ratio is increased significantly by more than three orders in the new poly-Si TFT compared with conventional poly-Si TFT. The leakage current is decreased significantly due to the highly resistive a-Si re TFTs while the ON-series resistance of the local a-Si is reduced significantly due to the considerable inducement of electron carriers by the positive gate bias, so that the ON-current is not decreased much.