It was investigated that traps were generated inside of the oxide and at the oxide interfaces by the stress bias voltage. The charge state of the traps can easily be changed by application of low voltage after the stress high voltage. It determined to the relative traps locations inside the oxides ranges from 113.4$AA$to 814$AA$ with capacitor areas of $10^{-3}{$mid$textrm}{cm}^2$</TEX>. The traps are charged near the cathode with negative charge and charged near the anode with positive charge. The oxide charge state of traps generated by the stress high voltage contain either a positive or a negative charge.