NiFe(60$AA$)/Co(5$AA$)/Cu(60$AA$)/Co(30$AA$) spin valve thin films were patterned into magnetoresistive random access memory (MRAM) cells by a conventional optical lithography process and their output and switching properties were characterized with respect to the cell size and geometry. When 1 mA of constant sense current was applied to the cells, a few or a few tens of mV of output voltage was measured within about 30 Oe of external magnetic field, which is an adequate output property for the commercializing of competitive MRAM devices. In order to resolve the problem of increase in the switching thresholds of magnetic layers with the downsizing of MRAM cells, a new approach using the controlled shape anisotropy was suggested and interpreted by a simple calculation of anisotropy energies of magnetic layers consisting of the cells. This concept gave a reduced switching threshold in NiFe(60$AA$)/Co(5$AA$) layer consisting of the patterned cells from about 15 Oe to 5 Oe and it was thought that this concept would be much helpful for the realization of competitive MRAM devices.