Deposition of parylene (PA) films has been explored at substrate temperatures below 2$0^{circ}C$ and pressures below 4 torr. The film thickness was measured using AFM and the film thickness measured was 3,500-12,000$AA$ and the growth rate was 20-70$AA$/min. T도 dielectric constant of the deposited PA films was found to be 2.66 and the dielectric strength was in excess of 2$ imes$105V/cm. The growth rate became a maximum at a precursor decomposition temperature of $600^{circ}C$. It was found that the growth rate decreased with increasing substrate temperature, whereas it increased with increasing pressure. At a precursor decomposition temperature of 75$0^{circ}C$ or at a deposition pressure above 1 Torr the film surface became rough due to particle formation in the gas phase. The condensation of a p-xylylene monomer on the substrate surface turned out to be a rate-limiting step in the growth of the PA films.