- 질소 이온주입법에 의한 BN 박막의 계면구조 개선 및 밀착력 향상
- ㆍ 저자명
- 변응선,이성훈,이상로,이구현,한승희,이응직,윤재홍
- ㆍ 간행물명
- 韓國眞空學會誌
- ㆍ 권/호정보
- 1999년|8권 2호|pp.157-164 (8 pages)
- ㆍ 발행정보
- 한국진공학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
The post ion implantation has been applied to modify early-grown BN layer and improve the adhesion of the BN films. The effect of ion implantation doses on microstructure and interlayer was investigated by FTIR and HRTEM. And the hardness and delamination life time of N+-implanted BN films were measured. With increasing the ion dose up to $5.0 imes10^{15} extrm{atoms/cm}^2$,the change of IR spectrum is observed. At $5.0 imes10^{16} extrm{atoms/cm}^2$, a drastic transition of cubic phase into hexagonal phase is detected. The change of microstructure of early-grown layers by ion implantation is confirmed using HRTEM. Both microhardness and delamination life time of BN films increase with ion dose. The modification model of early-grown BN layers is briefly discussed based on the displacement per atom and excess boron in the BN film induced by ion irradiation.