A probe card is one of the most important pan of test systems as testing IC(integrated circuit) chips. This work was related to bump-type silicon vertical probe card which enabled simultaneous tests for multiple semiconductor chips. The probe consists of silicon cantilever with bump tip. In order to obtain optimum size of the cantilever, the dimensions were determined by FEM(finite element method) analysis. The probe was fabricated by RIE(reactive ion etching), isotropic etching, and bulk-micromachining using SDB(silicon direct bonding) wafer. The optimum height of the bump of the probe detemimed by FEM simulation was 30um. The optimum thickness, width, and length of the cantilever were 20 $mum$, 100 $mum$,and 400 $mum$,respectively. Contact resistance of the fabricated probe card measured at contact resistance testing was less than $2Omega$. It was also confirmed that its life time was more than 20,000 contacts because there was no change of contact resistance after 20,000 contacts.