- 반응성 DC 마그네트론 스퍼터법에 의한 SnO$_2$ : F 박막의 전기광학적 특성
- ㆍ 저자명
- 정영호,김영진,신재혁,송국현,신성호,박정일,박광자
- ㆍ 간행물명
- 한국표면공학회지
- ㆍ 권/호정보
- 1999년|32권 2호|pp.125-133 (9 pages)
- ㆍ 발행정보
- 한국표면공학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
Fluorine-doped $SnO_2$ thin films were deposited on soda-lime glass substrates by reactive DC magnetron sputtering method. Crystallinity as well as electrical and optical properties of $SnO_2$ : F thin film were investigated as the variations of deposition conditions such as substrate temperature, DC Power, $O_2$ gas pressure, $SF_6$ gas pressure. $SnO_2$ : F thin film deposited with 5% $SF_6$ gas pressure showed electrical resistivities of $2.5 imes10^{-3}$cm with the average optical transparency (about 80%) These electrical and optical properties were found to be related to the crystallinity of $SnO_2$ : F thin films.