The gradual hole injection LIGBT (GI-LIGBT) which employs the dual gate and the p+ injector, was fabricated for eliminating a negative resistance regime and reducing a forward voltage drop in SA-LIGBT. The elimination of the negative resistance regime is successfully achieved by initiating the hole injection gradually. Furthermore, the experimental results show that the forward voltage drop of GI-LIGBT decreases by lV at the current density of 200 <TEX>$A/cm^2$<TEX>, when compared with that of the conventional SA-LIGBT. It is also found that the improvement in the on-state characteristics can be obtained without sacrificing the inherent fast switching characteristics of SA-LIGBT.