The Electrical conduction and optical properties of Ta$_{2}$/O$_{5}$ thin films as the insulators in DRAM capacitors were studied. Liquid Ta/sib 2//O sub 5/ were prepared by a sol-gel processing and multiple layers were applied by spin-coating up to thickness of 800$AA$. At annealing temperature of 300~$600^{circ}C$ the electrical conduction and specific dielectric constant were discussed the behaivor of carrier were observed by the Thermally Stimulated Current (TSC) at the temperature range of 30~23$0^{circ}C$. At annealing temperature of 300~$600^{circ}C$ the samples were found to be amorphous below $600^{circ}C$ and crystalline over it. The electrical strength was about 2.2 MV/cm at 40$0^{circ}C$. In spite of noncrystallization over 50$0^{circ}C$ the increasing of leakage current due to pinholes and increasing creak. The refractive index was obtained maximum (2.2) at 40$0^{circ}C$. The dielectric constant was obtained maximum(18.6) at 40$0^{circ}C$. TSC was observed one peak at the temperature range of 30~23$0^{circ}C$ from sample at 40$0^{circ}C$. In the case of collecting voltage the peak size is decreased in proportion to collecting voltage and then the peak may be thought carrier to be a ionic space charge.e.