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마그네트론 스퍼터링법을 이용한 Indium-Tin Oxide 박막의 제작과 그 특성에 관한 연구
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  • 마그네트론 스퍼터링법을 이용한 Indium-Tin Oxide 박막의 제작과 그 특성에 관한 연구
저자명
조길호,김여중,김성종,문경만,이명훈
간행물명
韓國舶用機關學會誌
권/호정보
2000년|24권 6호|pp.61-69 (9 pages)
발행정보
한국마린엔지니어링학회
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정기간행물|
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기타
이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
서지반출

기타언어초록

Indium-Tin Oxide (ITO) films were prepared on the commercial glass substrate by the Magnetron Sputtering method. The target was a 90wt.% $In_2O_3$-10wt.% $SnO_2$with 99.99% purity. The ITO films deposited by changing the partial pressure of oxygen gas ($O_2$/(Ar+$O_2$)) of 2, 3 and 5% as well as by changing the substrate temperature of $300^{circ}C$ or $500^{circ}C$. The influence of substrate pre-annealing and pre-cleaning on the quality of ITO film were examined, in which the substrate temperature was $500^{circ}C$ and oxygen partial pressure was 3%. The characteristics of films were examined by the 4-point probe, Hall effect measurement system, SEM, AFM, Spectrophotometer, and X-ray diffraction. The optimum ITO films have been obtained when the substrate temperature is $500^{circ}C$ and oxygen partial pressure is 3%. At optimum condition, the film showed transmittance of 81%, sheet resistivity of $226Omegatextrm{cm}^2$, resistivity($ ho$) of $5.4 imes10^{-3}Omega$cm, carrier concentration of $1.0 imes10^{19}cm^{-3}$, and carrier mobility of $150textrm{cm}^2$Vsec. From XRD spectrum, c(222) plane was dominant in the case of substrate temperature at $300^{circ}C$, without regarding to oxygen partial pressure. However, in the case of substrate temperature at $500^{circ}C$, c(400) plane was grown together with c(222) plane, only for oxygen partial pressure of 2 and 3%. In both case of chemical and ultrasonic cleaning without pre-annealing the substrate, it showed much almost same sheet resistivity, resistivity($ ho$), transmittance, carrier concentration, and carrier mobility. In case of $500^{circ}C$/60min pre-annealing before ITO film deposited, both transimittance and carrier mobility are better than no pre-annealing, because pre-annealing is supposed to remove alkari ions diffusion from substrate. ITO film deposited on the Corning 0080 sybstrate showed a little bit better sheet resistivity, resistivity($ ho$), transimittance, carrier concentration than the film deposited on commercial glass. But no differences between Corning substrate and pre-annealed commercial glass substrate are found.