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PTCR Characteristics of BaTiO$_3$Thin Films made by rf/dc Magnetron Sputter Technique
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  • PTCR Characteristics of BaTiO$_3$Thin Films made by rf/dc Magnetron Sputter Technique
  • PTCR Characteristics of BaTiO$_3$Thin Films made by rf/dc Magnetron Sputter Technique
저자명
Song. Min-Jong,So. Byung-Moom,Kim. Tae-Wan
간행물명
Transactions on electrical and electronic materials
권/호정보
2000년|1권 2호|pp.28-31 (4 pages)
발행정보
한국전기전자재료학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

BaTiO$_3$cerameic thin films doped with Mn were manufactured by rf/dc magnetron sputter technique. We have investigated crystal structure, surface morphology and PRCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat-treatment temperature. Second heat treatment of the specimen were performed in the temperature range of 400 to 1350$^{C}$ X-ray diffraction patterns of BaTiO$_3$ thin films show that the specimen heat treated below 600$^{C}$ is an amorphous phase and the one heat treated above 1100$^{C}$ forms a poly-crystallization . In this specimen heat-treated at 1300$^{C}$, a lattice constant ratio(c/a) was 1.188. Scanning electron microscope(SEM) image of BaTiO$_3$ thin films of the specimen heat treated in between 900 and 1100$^{C}$ shows a grain growth. At 1100$^{C}$, the specimen stops grain-growing and becomes a poly-crystallization . A resistivity-temperature characteristics of the specimen depends on the doping concentrations of Mn. A resistivity ratio between the value at room temperature and the one above Curie temperature was 10$^4$ for pure BaTiO$_3$ thin films and 10$^$5/ fo BaTiO$_3$ : additive 0.127mol% MnO