Diamond films have been achieved on Si(100) substrates using helicon plasma chemical vapor deposition(HPCVD), Gas mixtures with methane and hydrogen have been used. The growth characteristics were investigated by means of X-ray photoelectroton spectroscopy, Atomic force microscopy and X-ray diffraction. We obtained a plasma density as high as 10$^$10/~10$^$11/ cm$^$-3/ by helicon source. The smooth(100) faces of submicron diamond crystallites were found to exhibit pyramidal shaped architecture, The XPS spectrum for the nucleation layer indicates the presence of diamond at 285.4 eV, close to the reported value of 285.5 eV for diamond , XRD results demonstrates the existence of polycrystalline diamond as the diamond (111) and (220) peaks.