In this paper, a low noise amplifier has been developed, which is operating at L-band i.e., 1525-1575 MHz. By using resistive decoupling circuits, the resistor dissipates undesired signal in low frequency band. By adopting this design method the stability of the LNA is increased and the input impedance matching is improved. The LNA consists of the low noise GaAs FET ATF-10136 and the internally matched VNA-25. The low LNA is fabricated by both the RP circuit and the self-bias circuits in an aluminum housing. As a result, the characteristics of the LNA implemented show more than 32 dB in gain, lower than 0.5 dB in noise figure, 18.6 dBm output gain in 1 dB gain compression point.