- LPE 성장법으로 성장시킨 La을 첨가한 YIG 막의 자성특성
- ㆍ 저자명
- 김동영,한진우,김명수,이상석
- ㆍ 간행물명
- 전기전자재료학회논문지
- ㆍ 권/호정보
- 2001년|14권 3호|pp.257-262 (6 pages)
- ㆍ 발행정보
- 한국전기전자재료학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
Single crystalline films of La doped YIG(yttrium iron garnet) were grown by the liquid phase epitaxy. The lattice constants of films obtained by DCD(double crystalline diffractometer) measurement increased with increasing La contents in films. In particular, lattice constants of films grown wiht Y/La=20 solution were nearly same as those of GGG (gadolinium gallium garnet) substrate. The saturation magnetization measured with VSM (vibrating sample magnetometer) was about 1750Gauss which is the same as that of pure YIG irrespective of La contents in films. FMR(ferromagnetic resonance) linewidth of La doped YIG was smaller than that of pure YIG. Since appropriate La doping decreases the lattice mismatch between film and substrate, the FMR linewidth was Y/La=20 in this experiment.