- InAs/GaAs Self-organized Quantum Dots의 전기.광학적 특성 연구
- ㆍ 저자명
- 김기홍,박종도,배인호,손정식,문병연,이주인
- ㆍ 간행물명
- 전기전자재료학회논문지
- ㆍ 권/호정보
- 2001년|14권 2호|pp.99-103 (5 pages)
- ㆍ 발행정보
- 한국전기전자재료학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
We present a detailed of the interband transitions of InAs/GaAs self-organized quantum dots(QDs) based on surface photovoltage(SPV), photoreflactance(PR) and photoluminescence(PL) spectroscopies. At room temperature, interband absorption transitions of QDs have been observed by using SPV spectrum, which clearly exhibits three well-resolved absorption transitions of QDs have been observed by using SPV spectrum, which clearly exhibits three well-resolved absorption peaks. The absorption line shape is Gaussian-like. Furthermore, the corresponding interband transitions are also observed in PR and PL experiments at 77K.