S $r_{0.89}$B $i_{2.4}$T $a_2$ $O_{9}$ (SBT) thin films are deposited on Pt-coated electrode(Pt/Ti $O_2$/ $SiO_2$/Si) using RF magnetron sputtering method. In the XRD pattern, the SBT thin films had (105) orientation. As annealing temperature was increased from $600^{circ}C$ to 85$0^{circ}C$, the intensities of peak were increased. In the SEM images, Bi-layered perovskite phase was crystallized above $650^{circ}C$ and rod-like grains grew above 75$0^{circ}C$. The maximum remanent polarization and the coercive electric field at annealing temperature of 75$0^{circ}C$ are 11.60$mu$C/$ extrm{cm}^2$ and 48kV/cm respectively. The dielectric constant and leakage current density at annealing temperature of 75$0^{circ}C$ are 213 and 1.01x10$^{-8}$ A/$ extrm{cm}^2$, respectively. The fatigue characteristics of SBT thin filmsdid not change up to 10$^{10}$ switching cycles.s.s.