Recent remarkable progress in the semiconductor industry has promoted smaller size of semiconductor chips and increased amounts of heat generation. So, the demand for a substrate material to meet both the characteristics of thermal expansion coefficient and heat radiation has been on the increase. Under such conditions, tungsten(W)-copper(Cu) has been proposed as materials to meet both of the above characteristics. In the present study, the W-10wt.%Cu powders were synthesised by the mixing and hydrogen reduction of the starting mixture materials such as W-Cu, $W-CuCl_2$and $WO_3-CuCl_2$ in order to obtain the full densification. The W-10wt.%Cu produced by hydrogen reduction showed the higher interparticle friction than the simple mixed W-10wt%Cu because of the W agglomerates. In the dilatometric analysis the W-10wt.%Cu prepared from the $W-CuCl_2$was largely shrank by heating up $1400^{circ}C$ at the constant heating rate of $5^{circ}C$/min. The possibility of application of metal injection molding (MIM) was also investigated for mass production of the complex shaped W-Cu parts in semiconductor devices. The relationship between the temperature of molding die and the pressure of injection molding was analyzed and the heating up stage of 120-$290^{circ}C$ in the debinding process was controlled for the most suitable MIM condition.