In this study, high dielectric materials, (Pb,La)Ti $O_3$ thin films were fabricated by PLD (Pulsed Laser Deposition) method and investigated in terms of structural and electrical characteristics in order to develope the dielectric materials for the use of new capacitor layers of Giga bit-level DRAM. The deposition conditions were examined in order to fabricate uniform thin films through systematic changes of oxygen pressures and substrate temperature. The uniform thickness and smooth morphology of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were obtained at the conditions of substrate-target distance 5.5[cm], laser energy density 2.1[J/$ extrm{cm}^2$], oxygen pressure 200[mTorr] and substrate temperature 500[$^{circ}C$]. After the (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were fabricated under the above conditions, they were post-annealed by RTA process in order to increase the dielectric constant. The film thickness of 1200 [$AA$] had dielectric constant 821. Assuming that operating voltage is 2V, leakage current density of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films would result into 10$^{-7}$ [A/$ extrm{cm}^2$] and satisfied the specification of 256M DRAM planar capacitor, 4$ imes$10$^{-7}$ [A/$ extrm{cm}^2$]m}^2$</TEX>]