The thermal characteristics of TMR devices by using Fast Linear Annealing method has been studied. A computer program that employs the finite differential method has been developed to simulate the temperature distribution of a diameter of 4" silicon wafer, which is subjected to radiation heat from the halogen lamp. We adopted the temperature of 350$^{C}$, which is the highest temperature usually used in annealing for magnetic thin films. We changed moving velocity of the lamp from 0.05 mm/sec to 1 mm/sec. The moving velocity of halogen lamp has less effect on the local peak temperature of the sample only about 40$^{C}$. Therefore, we may be able to anneal TMR devices in such short time of 1 minute and 40 seconds per one wafer, using the Fast Linear Annealing method.