Since Metallo-Porphyrin (MP) is very interesting compound due to its unique electronic and redox properties and it is also chemically and thermally stable, MP has been studied for potential memory and switching devices. In this study, thin films of 5,10,15,20-Tetrakis-Octadecyloxymethylphenyl-Porphyrin-Zn(II) were prepared by the Langmuir-Blodgett (LB) method and characterized by using UV/vis absorption spectroscopy and cyclic voltammetry. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was 135 ${AA}^2$/molecule. The current-voltage (I-V) characteristics of these films were investigated. Further details on the electrical properties of Porphyrin-Zn(II) derivative films will be discussed.