In this study, the experiments are carried out by boron ion implantation at energies ranging from 700keV to 2MeV in silicon. The distribution of boron profiles are measured by SIMS(Cameca 6f). Boron dopants profiles after high temp]erasure annealing are also explained by comparisons of experimental and simulated data. A new electronic stopping model for Monte Carlo simulation of high energy implantation is presented. Also the comparisons of profiles by profiles boron ion implantations are demonstrated and interpreted with theoretical models. Finally range moments of SIMS and SRP profiles are calculated and compared with simulation results.