We have fabricated $Bi_{3.25}La_{0.75}Ti_3O_12$ (BLT) thin films on the Pt/Ti/$SiO_2$/Si substrates using a metalorganic decomposition (MOD) method with annealing temperature from $550^{circ}C$ to $750^{circ}C$. The structural properties of BLT films examined by x-ray diffraction (XRD). From XRD analysis. BLT thin films show polycrystalline structure. The layered-perovskite phase was obtained by spin-on films at above $600^{circ}C$ for 1h. Scanning electron microscopy (SEM) showed uniform surface composed of rodlike grains. The grain size of BLT films increased with increasing annealing temperature. The BLT film annealed at $650^{circ}C$ was measured to have a dielectric constant of 279, dielectric loss of 1.85(%), remanent polarization of $25.66mu C/ extrm{cm}^2$, and coercive field of 84.75 kV/cm. The BLT thin films showed little polarization fatigue test up to $3.5{ imes}10^9$ bipolar cycling at 5 V and 100 kHz.