The effect of bonding misfit on single crystallization of transient liquid phase (TLP) bonded joints of single crystal superalloy CMSX-2 was investigated using MBF-80 insert metal. The bonding misfit was defined by (100) twist angle (rotating angle) at bonded interface. TLP bonding of specimens was carried out at 1523K for 1.8ks in vacuum. The post-bond heat treatment consisted of the solution and sequential two step aging treatment was conducted in the Ar atmosphere. The crystallographic orientation analysis across the TLP bonded joints was conducted three dimensionally using the electron back scattering pattern (EBSP) method. EBSP analyses f3r the bonded and post bonded heat treated specimens were conducted. All bonded joints had misorientation centering around the bonded interface for as-bonded and post-bond heat treated specimens with rotating angle. The average misorientation angle between both solid phases in bonded interlayer was almost identical to the rotating angle at bonded interface. HRTEM observation revealed that the atom arrangement of both solid phases in bonded interlayer was quite different across the bonded interface. It followed that grain boundary was formed in bonded interface. It was confirmed that epitaxial growth of the solid phase occurred from the base metal substrates during TLP bonding and single crystallization could not be achieved in joints with rotating angle.