GaAs polycrystalline thin films with good performance were prepared on conducting glass by hot wall epitaxy (HWE), which were used for solar cell. Electron probe micro-analyzer (EPMA) was applied for the composition, morphology of surface and cross-section of grown films, and X-ray diffraction (XRD) for their phase structure; Raman scattering spectum (RSS) and photoluminescence (PL) were used for evaluating their optical characteristics. The results show that, there is textured structure on the surface of grown GaAs polycrystalline films, which is greatly promised to be suitable for the candidate of solar cell with low cost and high efficiency. It is concluded that the source and substrate at temperature of 900 ~ 930 $^{C}$ and 500 $^{C}$ respectively would be beneficial for such films.