The high quality and a nearly stoichometric growth of $Cd_{1-y} Zn_y$/Te(y＝0.04) epilayers have been successfully grown on GaAs substrate by hot wall epitaxy (HWE) by optimizing the growth condition including the preheating treatment and Cd reservoir temperature. The relationship between quality and thickness was examined and best value of FWHM from X-ray rocking curve of 121 arcsec are obtained. Also, emission peaks related to the recombination of free excitons such as the ground state and the first excited state were observed in the PL spectrum at 4.2K. The ($A^0$, X) emission related to Cd vacancy and deep level emission was not measured. These results indicated that the grown CZT/GaAs epilayer was high qualify and purity.