In this work, CdTe films were deposited on CdS/ITO/glass substrate by a close spaced sublimation (CSS) method. A $Cu_2$Te layer was deposited on the CdTe film by evaporating $Cu_2$Te powder. Then the samples were annealed for p+ ohmic contact. TEM and XRD analysis showed that $CdTe/Cu_2$Te interface exhibited different forms with various annealing temperature. A good p+ ohmic contact was achieved when the annealing temperature was between $180^{circ}C$ to $200^{circ}C$. Best cell efficiency of 12.34% was obtained when post annealing temperature was $200^{circ}C$ for 5 min. Thermal stress test of the CdS/CdTe cells with carbon back contact showed that the $Cu_2$Te contact was stable at $50^{circ}C$ in $N_2$ and was slowly degraded at $100^{circ}C$ in $N_2$. In comparison to the conventional carbon contact, the $Cu_2$Te contact showed a better thermal stability.