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Investigation of Adhesion Mechanism at the Metal-Organic Interface Modified by Plasma Part I
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  • Investigation of Adhesion Mechanism at the Metal-Organic Interface Modified by Plasma Part I
  • Investigation of Adhesion Mechanism at the Metal-Organic Interface Modified by Plasma Part I
저자명
Yong-Bin. Sun
간행물명
마이크로전자 및 패키징 학회지
권/호정보
2002년|9권 4호|pp.31-34 (4 pages)
발행정보
한국마이크로전자및패키징학회
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정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

For the mold die sticking mechanism, the major explanation is that the silica as a filler in EMC (epoxy molding compound) wears die surface to be roughened, which results in increase of adhesion strength. As the sticking behavior, however, showed strong dependency on the EMC models based on the experimental results from different semiconductor manufacturers, chemisorption or acid-base interaction is apt to be also functioning as major mechanisms. In this investigation, the plasma source ion implantation (PSII) using $O_2, N_2$, and $CF_4$ modifies sample surface to form a new dense layer and improve surface hardness, and change metal surface condition from hydrophilic to hydrophobic or vice versa. Through surface energy quantification by measuring contact angle and surface ion coupling state analysis by Auger, major governing mechanism for sticking issue was figured out to be a complex of mechanical and chemical factors.