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3D Lithography using X-ray Exposure Devices Integrated with Electrostatic and Electrothermal Actuators
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  • 3D Lithography using X-ray Exposure Devices Integrated with Electrostatic and Electrothermal Actuators
  • 3D Lithography using X-ray Exposure Devices Integrated with Electrostatic and Electrothermal Actuators
저자명
Lee. Kwang-Cheol,Lee. Seung S.
간행물명
Journal of semiconductor technology and science
권/호정보
2002년|2권 4호|pp.259-267 (9 pages)
발행정보
대한전자공학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
서지반출

기타언어초록

We present a novel 3D fabrication method with single X-ray process utilizing an X-ray mask in which a micro-actuator is integrated. An X-ray absorber is electroplated on the shuttle mass driven by the integrated micro-actuator during deep X-ray exposures. 3D microstructures are revealed by development kinetics and modulated in-depth dose distribution in resist, usually PMMA. Fabrication of X-ray masks with integrated electrothermal xy-stage and electrostatic actuator is presented along with discussions on PMMA development characteristics. Both devices use $20-mu extrm{m}$-thick overhanging single crystal Si as a structural material and fabricated using deep reactive ion etching of silicon-on-insulator wafer, phosphorous diffusion, gold electroplating, and bulk micromachining process. In electrostatic devices, $10-mu extrm{m}-thick$ gold absorber on $1mm{ imes}1mm$ Si shuttle mass is supported by $10-mu extrm{m}-wide$, 1-mm-long suspension beams and oscillated by comb electrodes during X-ray exposures. In electrothermal devices, gold absorber on 1.42 mm diameter shuttle mass is oscillated in x and y directions sequentially by thermal expansion caused by joule heating of the corresponding bent beam actuators. The fundamental frequency and amplitude of the electrostatic devices are around 3.6 kHz and $20mu extrm{m}$, respectively, for a dc bias of 100 V and an ac bias of 20 VP-P (peak-peak). Displacements in x and y directions of the electrothermal devices are both around $20{;}mu extrm{m}$at 742 mW input power. S-shaped and conical shaped PMMA microstructures are demonstrated through X-ray experiments with the fabricated devices.